A 1200V 600A Full SiC Half-Bridge Power Module with Low Inductance and Good Current Balancing Performance

Abstract:
A 1200V 600A SiC power module has been designed with low commutation loop inductance and good current balancing performances. The proximity effect is applied to achieve small commutation loop inductance of 4.8nH. Another key feature of the design is the usage of auxiliary substrates on the main substrates for the gate circuits and busbar, which makes it possible to keep the parallel MOSFETs in one row and good power loop symmetry is achieved. In addition, Kelvin source pins are used and the current direction in the main gate circuits are perpendicular to the power loop currents, which reduce the coupling between gate and power circuits. All the above helps to achieve good current balancing performance that 1.6% peak current difference among the parallel devices.