Performance Analysis of a 25-kW SiC-based Dual Active Bridge Converter based on Parallel-connected Devices
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262027
Proceedings: PCIM Europe 2024
Pages: 8Language: englishTyp: PDF
Authors:
Porpora, Francesco; Marciano, Daniele; Di Fazio, Emanuele; Di Monaco, Mauro; Nardi, Vito; Tomasso, Giuseppe; Benedict, Eric; Schnell, Ryan; Granato, Maurizio
Abstract:
This paper presents the design of a 25-kW Dual Active Bridge (DAB) converter based on parallel-connected SiC MOSFETs with the aim of demonstrating the applicability of discrete solutions for medium-power applications. A symmetric layout for the related gate-driving paths has been implemented and an experimental characterization of the DAB converter has been carried out considering different operating conditions in terms of input/output voltages and output power. The performances achieved in terms of electrical and thermal behavior of the paralleled SiC devices validate the proposed symmetric design.