An Accelerated Dynamic Gate Switching Stress Test Concept for SiC MOSFETs at High Drain Drain-Source Voltage (HV HV-GSS)
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262089
Proceedings: PCIM Europe 2024
Pages: 8Language: englishTyp: PDF
Authors:
Herrmann, Clemens; Thiele, Sven; Yang, Dezhi; Basler, Thomas; Neumeister, Matthias; Pfeifer, Markus
Abstract:
This paper presents a test concept for a dynamic gate stress test under high drain-source voltage and high acceleration via switching frequency (HV-GSS). Gate-switching stress tests with and without drain voltage (HV-GSS and GSS) were conducted using SiC trench MOSFETs in order to determine the in-fluence of high drain-source voltage on gate reliability in terms of gate-switching instability.