Enhanced Current Measurement Approach for Non-Isolated 6.5 kV Silicon Carbide MOSFETs
Conference: PCIM Europe 2024 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/11/2024 - 06/13/2024 at Nürnberg, Germany
doi:10.30420/566262278
Proceedings: PCIM Europe 2024
Pages: 4Language: englishTyp: PDF
Authors:
Du, Xinyuan; Ismail, Ahmed H.; Ma, Zhuxuan; Zhao, Yue
Abstract:
In this paper, comprehensive dynamic characterizations were conducted for the latest 6.5 kV silicon carbide (SiC) MOSFETs from room temperature to 175 °C. Since the 6.5 kV device sample has non-isolated baseplate, it is challenging to achieve accurate switching characterizations. A custom clamped inductive load (CIL) test platform is developed and optimized for the medium voltage (MV) SiC devices to achieve the high-bandwidth noise-immunity measurement. The results of the reverse recovery current measured by Rogowski coil, current probe, and current viewing resistor (CVR) are compared and analyzed. Body diode performance under different junction temperature is evaluated.