Innovative 12kW Three-level Power Supply for AI Servers Empowered by 400 V SiC MOSFET Technology
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541008
Proceedings: PCIM Conference 2025
Pages: Language: englishTyp: PDF
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Authors:
Wattenberg, Martin; Kasper, Matthias J.; Siemieniec, Ralf; Deboy, Gerald
Abstract:
This paper presents a 12kW AC/DC single-phase power supply to meet the growing power demands of data centers driven by training very large AI models. The combination of novel 400V SiC MOSFET device technology and multi-level topology are essential in achieving the desired power density (100 W/in3) and efficiency target (h > 97.5%). The introduction of 400V SiC MOSFET technology bridges the gap between 200 and 600V super-junction MOSFETs and is characterized by low switching losses and low on-state resistance. In order to keep the load transients of AI chips away from the AC line, a novel control concept involving a power-pulsation buffer circuit is introduced, which acts as an active filter and also provides full control of re-rush currents after line-cycle drop-outs.