Method to Fit a HV-IGBT TCAD-Model to Match the Switching Behaviour in Measurements

Abstract:
Finite Element Simulations of IGBTs are a mighty tool for investigating the fundamental behaviour of IGBTs. Calculating switching losses as well as studying effects like the self turn-on and self turn-off effect or current sharing in a parallel connection can be done easier and faster in simulations than in measurements. Because of the plasma feedback in bipolar devices, it is often required to use the Finite Element Method which solves the underlying differential equation.This paper presents a guideline for tuning an IGBT model in TCAD so that it matches the measured switching behaviour of the real IGBT.