Evaluation of a 650 V Hybrid Power Switch Combinig GaN Si SiC Technologies

Abstract:
In this paper, for the first time, a 650 V hybrid power switch (HPS) consisting of the latest cascode GaN FET, Si IGBT and SiC Schottky diode technologies is presented. The HPS bridges the performancw limitations of discrete versions of these device technologies and delivers optimal performance under varying operating conditions. This is achieved by utilizing the excellent forward characteristics of a MOS-Bipolar device (IGBT) together with the extremely fast switching performance of a GaN FET. Based on the experimental results, we show that the HPS device can achieve low conduction losses under a wide range of load conditions as well as low switching losses thanks to the fast-switching edges of GaN without a significant increas in costs. HPS are ideal for traction, charging and industrial drive applications.