Evaluation of a 650 V Hybrid Power Switch Combinig GaN Si SiC Technologies
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541022
Proceedings: PCIM Conference 2025
Pages: Language: englishTyp: PDF
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Authors:
Sheikhan, Alireza; Narayanan, E. M. Sankara
Abstract:
In this paper, for the first time, a 650 V hybrid power switch (HPS) consisting of the latest cascode GaN FET, Si IGBT and SiC Schottky diode technologies is presented. The HPS bridges the performancw limitations of discrete versions of these device technologies and delivers optimal performance under varying operating conditions. This is achieved by utilizing the excellent forward characteristics of a MOS-Bipolar device (IGBT) together with the extremely fast switching performance of a GaN FET. Based on the experimental results, we show that the HPS device can achieve low conduction losses under a wide range of load conditions as well as low switching losses thanks to the fast-switching edges of GaN without a significant increas in costs. HPS are ideal for traction, charging and industrial drive applications.