Power Semiconductor Package Structure Highly Robust against Power Cycling Stress at Δ Tvj=165deg C

Abstract:
The purpose of this investigation is to establish a power semiconductor packaging structure that is robust against self-heating stress, particularly under high junction temperature (Tj) and high temperature swing (DeltaTj) conditions. Prototype samples were designed and constructed using Cu sintering, SiC-SBD, Cu/In-var/Cu clad plates, and graphite thermal interface material (TIM) sheets, with the aim of enhancing robustness against such stresses. These samples were submitted for power cycling tests, confirming their capability of exceeding 200,000 cycles at Tvj_high≈200deg C and DeltaTvj=165deg C condition.