Selective DPWM (SDPWM) Method for Inner Modulation ANPCwith Paralleled SiC MOSFET and IGBT

Abstract:
As energy demand increasingly takes center stage, our goal is to enhance its transformation through more efficient solutions. To improve performance, the industry continuously introduces new technologies. A significant step is the transition from Si to SiC. While SiC offers numerous advantages over Si com-ponents, there are still many use cases in which Si is still very competitive in terms of cost or even performance. One way to combine the best of these two technologies is by paralleling Si IGBTs and SiC MOSFETs. This idea is not new, but there are great possibilities when adapting the Si and SiC content to the specific application conditions. Combining the well know modulation techniques and technologies in a creative way can bring surprising results.