Using Embedding Die Technology in GaN Half Bridge Module for 48 V Inverter Application

Abstract:
This work is related to using embedded die technology in GaN half bridge module design for 48V inverter to achieve high-efficiency and high-power density objectives. Usage of embedded dies reduces the parasitic inductances and increase efficiency and lifetime. Miniaturization of the power module enables higher power density and meets the market requirements, especially in applications with limited volume such as light electric vehicles. The implementation stages are given, from defining the requirements and determining the specifications to the characterization results of the modules, including manufacturing details and system tests.