Short-Circuit Behavior of Quasi Series Connected SiC-MOSFETs: Measurements and Simulative Validation

Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany

doi:10.30420/566541045

Proceedings: PCIM Conference 2025

Pages: Language: englishTyp: PDF

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Authors:
Baeumler, Christian; Gesele, Felix; Basler, Thomas; Brueckner, Thomas

Abstract:
In topologies with three active switches within a commutation loop, a failure of one device can lead to a combined short-circuit situation of quasi-serial switches. This paper, inspired by measurement results on state-of-the-art 3.3 kV SiC half-bridge modules, presents a comprehensive study that contributes additional explanations and discusses the influence of intrinsic packaging parameters beyond the possibilities of measurement. By utilizing a customized simulation model, the voltage distribution for arbitrary shortcircuit combinations is derived. Moreover, different parameter variations are judged concerning higher short-circuit robustness and, coincidentally, minimum impact on the normal operation.