A Gate Drive Circuit for GaN GIT Power Semiconductors with a Minimal Number of Components
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541057
Proceedings: PCIM Conference 2025
Pages: Language: englishTyp: PDF
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Authors:
Sah, Bikash; Sprunck, Sebastian; Peinsipp, Moritz; Jung, Marco
Abstract:
Gallium Nitride (GaN) devices have emerged as a promising solution to meet the demand for power electronics converters, which are power-dense, low-weight, and cost-effective. This paper presents an innovative gate drive circuit for application in GaN Gate Injection Transistors (GIT). The benefits of the proposed circuit are a low component count, generation of negative gate drive without using a bipolar power supply, ability to adjust the voltage and current transients in the gate drive circuit, and ease of scalability for parallel devices.