A Gain Maximized Gate Circuit Feedback Loop and its Effect on Current Mismatches of Paralleled IGBTs
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541076
Proceedings: PCIM Conference 2025
Pages: 9Language: englishTyp: PDF
Authors:
Tomforde, Lukas; Scheel, Tim; Prof. Dr.-Ing. Eckel, Hans-Guenter
Abstract:
When using a common gate drive unit for switching paralleled IGBT modules, a negative feedback loop helps decreasing dynamic current mismatches during turn-on and turn-off caused by unequal IGBT behaviour, as past works showed. This feedback loop can be significantly improved by a low ohmic connection between the gate terminals of the paralleled IGBTs and a high inductive busbar connection between the power emitter terminals. Within this paper the theoretical principle is presented and underlaid with Synopsys Sentaurus Device TCAD simulations as well as with measurement results using 6.5 kV, 1 kA single switch IGBT modules.