Parallelization of XHP(TM)2 CoolSiC(TM) 3.3 kV Devices

Abstract:
This paper presents an investigation into the switching behavior of 3.3 kV CoolSiC(TM) XHP(TM)2 modules in parallel operation, focusing on key aspects of paralleled high-power silicon carbide (SiC) devices. The results reveal that the positive temperature coefficient (PTC) of the on-resistance is crucial for symmetrizing module variations and balancing both static and dynamic losses. This allows for parallel switching without the need for selection criteria. Random module selection is found to improve the thermal performance at a system level compared to symmetric selection. The results were verified through thermal simulations and experiments on a reference setup for paralleling and with the XHP(TM)2 PEBB demonstrator.