Highly-Integrated 1200 V GaN-Based Monolithic Bidirectional Switch
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541089
Proceedings: PCIM Conference 2025
Pages: Language: englishTyp: PDF
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Authors:
Basler, Michael; Reiner, Richard; Grieshaber, Daniel; Benkhelifa, Fouad; Mueller, Stefan; Moench, Stefan
Abstract:
This work presents a highly-integrated GaN-based monolithic bidirectional switch (MBDS) with blocking voltage beyond 1200 V. A novel device structure for MBDS with intrinsically integrated free-wheeling diodes is introduced to improve the single-gate self-control characteristic for unidirectional current conduction. The MBDS is realized as a large-area device with an on-resistance of 178 mOhm in a GaN power IC, which includes additional peripherals such as two integrated gate drivers, current sense-FET, temperature sensor, and substrate network to avoid back-gate effects. The GaN power IC is fabricated in a GaN-on-XISO technology and offers an advanced power device for various topologies.