New 3.3 kV HV-IGBT Module for High-Speed-Switching

Abstract:
Power modules for traction applications require lower power loss and higher reliability. To satisfy these needs, we have developed the 3.3 kV/1500 A XB-series High Voltage Insulated Gate Bipolar Transistor (HV-IGBT) module especially for applications with high switching frequencies. The total switching loss of the developed module can be reduced by over 15.4 % compared to the conventional 3.3 kV R-series module by optimizing the gate design. The 3.3 kV/1500 A XB-series module also provides higher ro-bustness. Reverse Bias Safe Operating Area (RBSOA) capability in terms of maximum current, is im-proved by 48.7% compared to the conventional 3.3 kV R-series module. To mitigate current crowding during turn-off switching and to relax the electric field at the edge termination, the new XB-series adopts the LNFLR (Linearly-narrowed Field Limiting Ring) design. Furthermore, the XB-series ensures a high robustness by larger Reverse Recovery Safe Operating Area (RRSOA) and suppressing current snap-off during recovery Regarding the structure of the module, the new XB-series improved the thermal cycling lifetime by new solder alloy applied for terminals.