Next-Generation 670 V RC IGBT in HCC Package Enhances Performance and Ruggedness in PFC Applications

Abstract:
The most recent advancements in discrete Insulated Gate Bipolar Transistors (IGBTs) significantly en-hance the power density and efficiency of converter systems. Infineon’s new 670 V reverse-conducting discrete IGBT contributes to increased efficiency and reduced energy consumption in home appliances, particularly in air conditioning units. Therefore, the effective utilization of power devices is of paramount importance. This paper presents an evaluation of improvements in converter systems achieved through the application of reverse-conducting IGBTs, comparing their performance against that of equivalent silicon IGBTs in the TO247 package. To thoroughly assess the performance and viability of discrete IGBTs within power electronics systems, both dynamic and static measurements were performed, fol-lowed by application tests in a power factor correction (PFC) boost topology. Furthermore, this study emphasizes thermal performance and efficiency, as the experimental results illustrate the critical im-portance of incorporating a reverse-conducting diode in PFC boost topologies.