Size Up Challenge of β-Ga2O3 Crystal Growth with Cold Container Called OCCC Method
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541134
Proceedings: PCIM Conference 2025
Pages: Language: englishTyp: PDF
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Authors:
Kitahara, Masanori; Taketoshi, Tomida; Kochurikhin, Vladimir; Liudmila, Gushchina; Kamada, Kei; Shoji, Yasuhiro; Kakimoto, Koichi; Yoshikawa, Akira
Abstract:
The Baliga figure of merit for β-Ga2O3 is much higher than SiC, making it a promising power semiconductor. However, high costs and defect density, mainly due to the use of expensive precious metal crucibles, limit its development. We report on large-size bulk crystal growth using the Oxide Crystal growth from Cold Crucible (OCCC) method, which eliminates the need for metal crucibles. Growth was achieved with a basket size of 100-150mm under normal air atmosphere. Though it become partly poly crystal method produced large crystals of around 70mm diameter, showing the potential for large single-crystal growth.