SuperQ Technology: A Game-Changer in Power Device Innovation. Analysis of SuperQ 200V MOSFET Industry Leading Design, Manufacture and Performance.

Abstract:
In recent years, the trend of development of new Innovative Si-based architectures and processes has stalled. This stagnation contributes to the notion that no further structural advances are possible for silicon devices. This analysis presents innovative SuperQ architecture that although it is applied to silicon it will be used in the future in silicon carbide, gallium nitride or other materials. This presentation focuses on silicon SuperQ 200V MOSFET reduction of Rdson, switching losses resulting in improvement of efficiency in customer applications. Proven Reliability and Robustness of new Architecture as applied to 200V silicon MOSFET is summarized using industry standard Reliability testing.