Characteristics of SiC MOSFET Switching and Thermal Properties for Power Semiconductor Applications

Abstract:
In this study, the fundamental characteristics of SiC MOSFETs were evaluated, with a focus on their on/off switching properties. The basic electrical properties of the SiC MOSFETs were measured, and a half-bridge circuit was applied to analyze the characteristics of pulse waveforms. A driving circuit capable of operating at frequencies up to 50 kHz was designed and tested. By varying frequency, duty ratio, and gate resistance, pulse characteristics such as ringing, overshoot, and rise time were observed and analyzed. Additionally, crosstalk and shoot-through current likely to occur at high frequencies, duty cycles, and temperature were measured and analyzed. The pulse frequency range is varied from 1 kHz to 50 kHz, with duty ratios varying from 20% to over 70%, and gate resistance varying from 10 Ohm to 100 Ohm. These switching characteristics of the SiC MOSFET provide valuable insights for the development and further optimization of power semiconductor modules.