Micrometer cantilever beam measurements in at joining interfaces of AMB-Si3N4-Copper substrates

Abstract:
For high performance circuit boards, the combination of Si3N4 and copper, joined by an Active Metal Brazing process (AMB) has become the standard material combination due to high thermal conductivity combined with very high flexural strength. These properties ensure high stability at thermal cycles which are necessary for high packing densities and charging of electric vehicles. In µm cantilever beam experiments at the interface between a hypereutectic silver copper active filler metal and Si3N4 ceramic, the strength of the individual components of the joining interface where investigated.