Constructing a High-Current Zth-Test Bench with Low-Voltage MOSFETs for Power Semiconductor Modules
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541160
Proceedings: PCIM Conference 2025
Pages: Language: englishTyp: PDF
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Authors:
Heise, Tobias; Fuhrmann, Jan; Eckel, Hans-Guenter
Abstract:
This paper describes a self-made 2000 A low-voltage MOSFET for power-cycling and Zth test bench. The development of the auxiliary switches is based on surface-mountable MOSFETs in a two-step soldering process, using lead-free solder alloys (SAC, SnBi). The aim was to realise a reduction in the electrical power of the Zth test bench. In the end, the losses could be reduced by around 70 % through the developed the auxiliary switches alone. Also shown is a Zth measurement of the self-made 2000 A low-voltage MOSFET and the entire structure of the High-Current Zth-Test Bench.