Dynamic Reverse Bias: Lifetime Modeling for SiC MOSFET Automotive Application
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541198
Proceedings: PCIM Conference 2025
Pages: 5Language: englishTyp: PDF
Authors:
Sitta, Alessandro; Mauromicale, Giuseppe; Fiore, Michele; Salvo, Luciano; Nardo, Domenico; Amata, Benedetto; Nania, Massimo; Buonomo, Simone; Calabretta, Michele
Abstract:
This work investigates the reliability of SiC MOSFET under dynamic reverse bias (DRB) conditions during mission profile. Through a dedicated campaign with an innovative experimental setup, we build a lifetime model to predict reliability during applicative mission profile. We conduct a long-term DRB test on a robust sample size and obtain the Weibull statistics. Using the lifetime model, we calculate the expected unreliability failure during mission profile, demonstrating SiC device robustness.