Investigation of a Single-Gate GaN HEMT as Bidirectional Switch in a Low Voltage Multilevel Topology
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541211
Proceedings: PCIM Conference 2025
Pages: Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Grieshaber, Daniel; Reiner, Richard; Basler, Michael; Benkhelifa, Fouad; Quay, Ruediger; Moench, Stefan
Abstract:
This work utilizes one conventional AlGaN/GaN HEMT with one gate as bidirectional switch in a three-level T-type converter topology operating at up to 48 V. The focus of this work is the investigation of the limits of AlGaN/GaN HEMTs in this operational region. An experimental setup with a Z-diode based driving circuit verifies the bidirectional switching capabilities of conventional single-gate AlGaN/GaN HEMTs and shows that their absence of the intrinsic body diode can be considered as an additional degree of freedom and not as a drawback.