Enhancing DC-DC Boost Converter Performance with Vertical GaN Split-RSO-MOSFET
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541213
Proceedings: PCIM Conference 2025
Pages: Language: englishTyp: PDF
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Authors:
Jaiswal, Nilesh Kumar; Ebel, Thomas; Sharbati, Samaneh
Abstract:
This work focuses to improve the performance of DC-DC converters utilizing a vertical GaN split-gate technology-based resurf stepped oxide MOSFET (Split-RSO-MOSFET). The field-plate (FP) electrode in the Split-RSO-MOSFET helps to reduce the surface electric field and binges in the middle of the drift layer, while being enveloped by a thicker oxide within the trench. The Split-RSO-MOSFET was simulated and analyzed using the TCAD simulator and compared with the conventional Trench-MOSFET and RSO-MOSFET. Compared to the Trench-MOSFET and RSO-MOSFET, the Split-RSO-MOSFET exhibits a significant ~11-fold decrease in CGD and a ~42% reduction in energy loss during conversion, attributed to the inclusion of an inter-dielectric layer and gate insulation from the drain by FP. A Split-RSO-MOSFET, functioning with low energy loss, will consequently result in reduced converter dimensions and enhanced system efficiency.