Thermally stable Operating Point for SiC MOSFETs in the Power Cycling Test
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541225
Proceedings: PCIM Conference 2025
Pages: Language: englishTyp: PDF
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Authors:
Dresel, Fabian; Farnbacher, Lukas; Leib, Juergen; Eckardt, Bernd
Abstract:
Silicon Carbide (SiC) MOSFETs are prone to a thermal runaway type failure in the power cycling test. This leads to a possible change of failure mode and may cause overestimation of power cycling lifetime using empirical models. This work examines the thermally stable operation of SiC MOSFETs in the power cycling test. A criterion for stable operation is proposed and applied to sample data. A method to assess stability form datasheet values and power cycling data without the need for special measurements is given.