Analysis of Aged SiC MOSFET and Si IGBT Power Modules considering the Loss Calculation of a Heavy-Duty Fuel Cell Truck
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541236
Proceedings: PCIM Conference 2025
Pages: Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Guerlek, Yavuz; Heimler, Patrick; Gesell, Soeren; Ackerl, Martin; Dold, Roland; Basler, Thomas
Abstract:
The aging of power modules in Heavy-Duty Fuel Cell Trucks is crucial because, as these modules age, their on-state resistance increases. This resistance growth leads to higher losses, especially in Si IGBTs and SiC MOSFETs, which in turn reduces the truck's operational efficiency. This study provides the findings from simulations of switching and conduction losses, which were conducted using a real mission profile and including the measured data from aged devices that display different levels of on-state resistance. This work presents an analysis of aged modules, where the focus is the comparison of both chip technologies. The total loss energy considering a real mission profile can be reduced with the designed SiC MOSFETs by 80 %.