Statistically Relevant Comparison of 6.5kV SiC MOSFETs with and without Integrated Schottky Diodes

Abstract:
New SiC MOSFETs are being developed to improve voltage blocking, switching speed, and losses. Integrating a Schottky diode structure within the SiC MOSFET chip is one key advancement. While this technology has been available in devices rated up to 3.3 kV, it is now being introduced at higher voltages. This analysis compares SiC MOSFETs with and without integrated Schottky diodes at 6.5 kV. As part of this study, eight single-chip half-bridge modules were packaged and evaluated via double pulse tests. The outcomes of this study demonstrate that the inclusion of the integrated Schottky diode reduces switching losses between 7.8 to 23.2%, depending on operating conditions. This article also demonstrates the importance of ensuring statistical relevance when comparing devices in this fashion.