Enhanced Performance of the CoolSiC(TM) MOSFET 1200 V G2 in a TO-247 Package for Industrial Applications
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541259
Proceedings: PCIM Conference 2025
Pages: 8Language: englishTyp: PDF
Authors:
Akbar, Syeda Qurat ul ain; Cerezo, Jorge
Abstract:
This paper introduces the new CoolSiC(TM) MOSFET 1200 V generation 2 (CoolSiC(TM) G2) discrete family in an improved TO-247-4 high-creepage package. The products are optimized for a wide range of industrial applications. They have demonstrated exceptional electrical and thermal performance, and a superior robustness against overloads and transient events. The enhanced switching performance of the CoolSiC(TM) MOSFETs G2 reduces switching losses and consequently lowers the operating junction temperatures. The products are further enhanced by the .XT interconnection technology with a unique diffusion-soldering die-attach process, leading to higher efficiency and power density. A comprehensive comparative analysis with commercially available SiC devices has confirmed the improved electrical, thermal, and rugged performance of the CoolSiC(TM) MOSFET 1200 V G2, paving the way for energy-efficient, compact, and reliable industrial inverter systems.