Benefits of parameterizable SiC MOSFET compact models for virtual prototyping

Abstract:
The rapid advancement in power electronics necessitates accurate and flexible models for the design and optimization of semiconductor devices. Infineon Technologies AG has addressed this need by developing parameterizable SiC MOSFET compact models, which offer substantial benefits for virtual pro-totyping. These models combine the precision of physics-based behavioral models with the flexibility of parameter adjustment, enabling the simulation of various device and process variants. This enhances system optimization and reliability by enabling circuit designers to predict switching transients and energies with high accuracy and to simulate diverse conditions. These models provide an accurate depiction of output characteristics and device capacitances, and have been validated through comprehensive switching measurements.