Optimizing SiC MOSFET Short Circuit and Transient Behaviors via Common Source Inductance Voltage

Abstract:
In the application of SiC MOSFET, the low energy loss during transient period and high robustness in the short-circuit are the particular concerning aspect. This paper investigates the impact of voltage drop across the common source inductance (VLcom) on TO 247 packaged SiC MOSFET, focusing on short-circuit conditions and normal turn on behavior. In short-circuit condition, increasing VLcom reduces short circuit current (Isc) and enhances detection speed, thereby improving short-circuit robustness. Additionally, utilizing VLcom in normal turn on behavior, it is possible to achieve a high drain source current slope (dids/dt) to get low normal turn on loss (Eon) while without exceeding device’s breakdown voltage.