Versatile Compact Model for SiC Power MOSFET Body-Diode Reverse-Recovery
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541355
Proceedings: PCIM Conference 2025
Pages: 6Language: englishTyp: PDF
Authors:
Yan, Lixi; Maier, Christian; Salcines, Cristino; Lautensack, Christian; Costachescu, Dragos
Abstract:
This work presents a compact modeling approach to describe the dynamic behavior of the body diode in SiC power MOSFETs. An analysis of the physical mechanism of the transient reverse-recovery of the body-diode is investigated by means of TCAD simulations, which serve as basis to derive the equations of the proposed compact model. Model parameters are extracted from double pulse measurements of a commercially available SiC power MOSFET at different operating conditions. The simulation result shows that the proposed model can accurately describe the reverse-recovery charge, peak-current and the snap-back dynamics