GaN Gate Driver for SiC MOSFETs in a Megawatt Inverter
Conference: PCIM Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/06/2025 - 05/08/2025 at Nürnberg, Germany
doi:10.30420/566541402
Proceedings: PCIM Conference 2025
Pages: Language: englishTyp: PDF
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Authors:
Ye, Yijun; Sanala, Arvind; Hensler, Alexander; Basler, Thomas; Lutz, Josef
Abstract:
High power inverter applications utilizing SiC MOSFETs (or IGBTs) require multiple chips in parallel. However, paralleled chips lead to a significant peak current on the gate drivers during the switching events, which could surpass the capabilities of a standard gate driver. Addressing this issue, a booster stage is implemented between the gate driver and the parallel chips. This paper presents a concept employing a GaN FET based booster stage to efficiently drive a larger number of SiC MOSFETs in parallel, which is also suitable for IGBTs. The performance of this GaN booster is analysed and compared with a Si MOSFET based booster configuration. The analysis high-lights the advantages of GaN FETs in terms of clean switching, smaller package size, lower power loss, and better thermal performance, making it an attractive solution for high-power applications.