400 V SiC MOSFET Unlocks New Efficiency and Power Density Ranges for Server and AI Power Supply Solutions
Conference: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/24/2025 - 09/26/2025 at Shanghai, China
doi:10.30420/566583001
Proceedings: PCIM Asia Shanghai Conference 2025
Pages: 10Language: englishTyp: PDF
Authors:
Song, Owen; Meneses, David; Siemieniec, Ralf; Rossi, Alex; Kutschak, Matteo-Alessandro; Jagannath, Sriram
Abstract:
The 400 V SiC MOSFET technology offers devices with low switching and conduction losses. The device concept and properties are briefly introduced. Its benefits are investigated in a power supply (PSU) for server applications that delivers 3.3 kW at 180 V - 265 V AC input and 50 V output voltage. The unit employs a 3-level flying capacitor PFC topology, and features hold-up time as per server requirements. Considerations for the charging of the flying capacitor during start-up and the driving of the 3-level stacked devices are discussed. The power supply delivers a total peak efficiency over 97.6 % at 230 VAC input with a power density of almost 100 W/in3.