Superjunction MOSFET with a Trench Contact and Embedded SiO2 Insulator for Excellent Reverse Recovery
Conference: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/24/2025 - 09/26/2025 at Shanghai, China
doi:10.30420/566583009
Proceedings: PCIM Asia Shanghai Conference 2025
Pages: 5Language: englishTyp: PDF
Authors:
Li, Rui; Ma, Keqiang; Meng, Fanxin; Jiang, Xingli; Hu, Min
Abstract:
A new superjunction MOSFET (SJ-MOSFET) with a trench contact and embedded SiO2 insulator (ESO) is proposed and investigated by TCAD simulations. At the reverse conduction state, since electrons in the n-pillar can be easily collected by the trench contact, the hole injection efficiency of the body diode can be lowered to reduce the reverse recovery charge (Qrr). In addition, the SiO2 insulator is embedded in the p-piller, which can increase the resistance of the hole extraction path during reverse recovery so as to reduce the current recovery rate (dir/dt) from the peak reverse current (Irrm) to zero. Simulation results show that, compared with the conventional SJ-MOSFET, Qrr an dir/dt of the proposed SJ-MOSFET can be reduced by 44% an82%, respectively.