New Developed 3.3kV/2.4kA Trench IGBT for Traction Application
Conference: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/24/2025 - 09/26/2025 at Shanghai, China
doi:10.30420/566583010
Proceedings: PCIM Asia Shanghai Conference 2025
Pages: 5Language: englishTyp: PDF
Authors:
Chen, Xing; Zhu, Liheng; Wang, Bin; Qin, Rongzhen; Xiao, Qiang
Abstract:
In this paper, new developed 3.3kV/2.4kA trench IGBT module is introduced by implementing new generation trench IGBT and FRD technology. By introducing new topside cell structure and advanced buffer design, the on-state voltage drop and turn-off energy loss were reduced and a high ruggedness module with maximum temperature as high as 150