A Robust and Reproducible Gate Charge Measurement Approach for SiC MOSFET Characterization

Abstract:
Gate-charge is a critical parameter in various applications, providing insights into the switching time and losses that affect converter efficiency. Specially, gate source charge QGS and gate drain charge QGD are highly sensitive to both hardware setup and evaluation algorithms. This paper investigates the influence of setup parasitic elements and different evaluation algorithms, a robust and reproducible gate-charge measurement approach for SiC MOSFETs is presented. With this method, SiC MOSFETs gate-charge could be determined with high accuracy, good repeatability and reproducibility. This approach allows statistics monitoring and verification in modern power devices characterization.