Switching Behavior Investigation of 1200V CoolSiC(exp TM) MOSFET G2 Discrete
Conference: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/24/2025 - 09/26/2025 at Shanghai, China
doi:10.30420/566583020
Proceedings: PCIM Asia Shanghai Conference 2025
Pages: 4Language: englishTyp: PDF
Authors:
Zhao, Jia; Xiao, Miaomiao; Shen, Song
Abstract:
Infineon CoolSiC(exp TM) MOSFET G2 achieves enhanced performance via cell pitch shrink and structural optimization. This study analyzes its dynamic characteristics through double-pulse tests under varied load current and gate resistances. Results demonstrate up to 40% reduction in switching losses versus G1 while preserving conduction efficiency. Practical guidelines like gate resistor and negative voltage selections are proposed for high frequency applications. These findings provide essential references for implementing CoolSiC(exp TM) MOSFET G2 in high efficiency power electronics systems.