New 1200 V SiC MOSFET-based CIPOS(exp TM) Maxi Intelligent Power Module for High-Efficiency Motor Drives
Conference: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/24/2025 - 09/26/2025 at Shanghai, China
doi:10.30420/566583024
Proceedings: PCIM Asia Shanghai Conference 2025
Pages: 6Language: englishTyp: PDF
Authors:
Lee, Kihyun; Kim, Jinhyeok; Han, Soohyuk; Baek, Mi-ran; Song, Bokkeun
Abstract:
This paper presents Infineon’s new 1200 V Silicon Carbide (SiC) MOSFET-based CIPOS(exp TM) Maxi intelligent power module (IPM), designed for high-performance motor drive applications, including threephase AC motors and active harmonic filters for HVAC systems. The module is packaged in dual in-line package (DIP) with transfer molding technology, integrating optimized silicon-on-insulator (SOI) gate drivers and a direct copper bonding (DCB) substrate for enhanced thermal performance and electrical efficiency. Utilizing CoolSiC(exp TM) MOSFETs, this IPM delivers high power density in a compact form factor. This paper provides a comprehensive overview of the module architecture, semiconductor technology, electrical characteristics, packaging, and thermal performance.