Design and Assessment of Si/SiC Hybrid Power Module With Cu Clip Interconnection for Solar Inverter
Conference: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/24/2025 - 09/26/2025 at Shanghai, China
doi:10.30420/566583027
Proceedings: PCIM Asia Shanghai Conference 2025
Pages: 5Language: englishTyp: PDF
Authors:
Pan, Xiaofei; Zhang, Xiankun; Zhang, Xiaodong; Liu, Yuancheng; Liang, Yuxi; Luo, Ming
Abstract:
To address the trade-off between the high cost of all-SiC power modules and the performance limitations of traditional Si-based modules, this study presents the design and optimization of a hybrid SiC/Si NPC three-level power module for 1500V photovoltaic and energy storage applications. By introducing the P-cell/N-cell concept, the commutation loops are reorganized to minimize parasitic inductance, achieving significant reductions of approximately 4nH in short loops and 7nH in long loops compared to the Infineon Si module. The hybrid module replaces specific Si IGBTs with SiC MOSFETs and utilizes SiC SBDs to enhance performance while maintaining cost efficiency. A full copper clip bonding approach is adopted to further reduce parasitic inductance. Double-pulse tests at VCE = 750V and currents of 100A, 200A, 300A, and 400A demonstrate excellent switching performance, validating the module's superior design. The results highlight the effectiveness of the proposed optimization strategy in improving power module performance for high-voltage applications.

