Introducing a new 650 V SOI Gate Driver with Improved DESAT Protection
Conference: PCIM Asia Shanghai Conference 2025 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09/24/2025 - 09/26/2025 at Shanghai, China
doi:10.30420/566583074
Proceedings: PCIM Asia Shanghai Conference 2025
Pages: 5Language: englishTyp: PDF
Authors:
Chen, Zhou; Labella, Mercedes; Mele, Gianluca
Abstract:
1ED2127 is the latest gate driver designed with Infineon’s 2nd-generation high-voltage silicon-on-insulator (SOI) technology. Compared with existing parts, 1ED2127 can deliver 3x faster propagation delay (55 ns), and much higher output current rated at 4 A typical. Furthermore, an improved DESAT circuit can detect a short circuit event and turn off the power switch as fast as 1 us, while achieve better noise immunity at the same time. These features make it a cost-effective solution to drive SiC MOSET in high switching frequency applications.