Thermal Transient Measurement Methods for Cascode Power Devices to Determine Junction to Package Thermal Resistance
Conference: PCIM Asia New Delhi - The Agent of Change for the Indian Power Electronics Industry
12/09/2025 - 12/10/2025 at Dr. Ambedkar International Centre, New Delhi, India
doi:10.30420/566677032
Proceedings: PCIM Asia New Delhi
Pages: 9Language: englishTyp: PDF
Authors:
Badalawa, Wasanthamala; Yoshitaka, Aoki; Hara, Tomoaki
Abstract:
Cascode power devices are commonly utilised in industrial environments to optimise operational efficiency. Robust thermal management is critical for ensuring sustained, high-level performance. This paper introduces three types of thermal transient measurement methods for cascode power devices based on the GaN HEMT. The thetajc values obtained from each method varied, however each method was valid and the reasons for these variations were investigated. Their validity was discussed based on simulation model calibration. The thetajc significantly differed due to differences in the heating amounts of the HEMT and MOSFET in each thermal transient measurement method.

