New 4.5 kV HV-IGBT Module for High-Speed-Switching

Abstract:
Low power loss and high reliability are critical requirements for power modules. To address these requirements, a 4.5 kV/1200 A XB-series High Voltage Insulated Gate Bipolar Transistor (HV-IGBT) module has been developed. This module achieves a 6.6 % reduction in total switching loss and a 9.7 % increase in output current compared to conventional 4.5 kV R-series modules. Furthermore, its Reverse Bias Safe Operating Area (RBSOA) capability for maximum current has been improved by a factor of 1.7 compared to conventional 4.5 kV R-series modules. This enhancement is realized through the adoption of a Linear Narrow Field Limiting Ring (LNFLR) design, which mitigates current concentration during switch-off and alleviates electric fields at the edge termination. Additionally, the XB series expands the Reverse Recovery Safe Operating Area (RRSOA) by suppressing current snap-off during recovery. Regarding the reliability of the module, superior humidity resistance is ensured by optimizing the chip termination structure. Furthermore, the terminal connections have improved thermal cycling lifetime by using high strength solder.