Comprehensive Characterization of SiC Schottky Barrier Diodes from Room Temperature Down to 7K
Conference: PCIM Asia New Delhi - The Agent of Change for the Indian Power Electronics Industry
12/09/2025 - 12/10/2025 at Dr. Ambedkar International Centre, New Delhi, India
doi:10.30420/566677043
Proceedings: PCIM Asia New Delhi
Pages: 6Language: englishTyp: PDF
Authors:
Guha, Sanchari; Takayama, Hajime; Fukunaga, Shuhei; Shintani, Michihiro
Abstract:
This study presents a comprehensive experimental characterization of commercially available silicon carbide (SiC) Schottky Barrier Diodes (SBDs) over a wide temperature range, from 300K down to 7 K. Multiple bare-die SiC SBD samples from different manufacturers and generations were evaluated under cryogenic conditions using a helium-based measurement system. While previous studies have primarily focused on measurements near 70 K employing nitrogen-based cryostats, this work extends the measurements to lower temperatures to reveal additional physical phenomena. The observed temperaturedependent behavior, including variations in improved forward voltage drop and capacitance characteristics, are discussed for n-type SiC SBDs.