ASFET-Based Approach for Enhanced Dynamic Current Sharing in Paralleled Power Devices
Conference: PCIM Asia New Delhi - The Agent of Change for the Indian Power Electronics Industry
12/09/2025 - 12/10/2025 at Dr. Ambedkar International Centre, New Delhi, India
doi:10.30420/566677045
Proceedings: PCIM Asia New Delhi
Pages: 5Language: englishTyp: PDF
Authors:
Kulkarni, Aniket; Patel, Hamza; Ould-Ahmed, Sami
Abstract:
Paralleling of MOSFETs is widely used in high-power systems to overcome the limitations of individual devices. While steady-state current sharing is generally well understood, achieving balanced current during switching events remains challenging due to device parameter variations and PCB layout-induced imbalances. This paper introduces a new class of Application-Specific FETs (ASFETs), optimized at the silicon level for synchronized parallel operation. Key parameters are carefully tuned to enable balanced current distribution, especially during dynamic transitions. A new figure of merit, DeltaID, is proposed to quantify mismatch during switching. Hardware testing confirms that ASFETs enhance dynamic sharing, thermal balance, and avoid overdesigning.

