Cover IEC 62373-1:2020

IEC 62373-1:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

Circulation Date: 2020-07
Edition: 1.0
Language: EN-FR - bilingual english/french
Seitenzahl: 44 VDE Artno.: 248984


IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.