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IEC 63275-2:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation

40.00 € 

IEC 63275-1:2022

Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 1: Test method for bias temperature instability

70.00 € 

IEC 63284:2022

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

70.00 € 

IEC 60747-8:2010+AMD1:2021 CSV (Consolidated Version)

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

450.00 € 

IEC 60747-8:2010/AMD1:2021

Amendment 1 - Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

40.00 € 

IEC 62373-1:2020

Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET

145.00 € 

IEC 60747-7:2010/AMD1:2019

Amendment 1 - Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

10.00 € 

IEC 60747-7:2010+AMD1:2019 CSV (Consolidated Version)

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

450.00 € 

IEC 60747-7:2010

Semiconductor devices - Discrete devices - Part 7: Bipolar transistors

345.00 € 

IEC 60747-8:2010

Semiconductor devices - Discrete devices - Part 8: Field-effect transistors

320.00 € 

IEC 62416:2010

Semiconductor devices - Hot carrier test on MOS transistors

40.00 € 

IEC 62417:2010

Semiconductor devices - Mobile ion tests for metal-oxide semiconductor field effect transistors (MOSFETs)

20.00 € 

IEC 62373:2006

Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET)

70.00 €