Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 3: Test method for defects using photoluminescence
Circulation Date: 2020-07
Language: EN-FR - bilingual english/french
Seitenzahl: 51 VDE Artno.: 248985
IEC 63068-3:2020 provides definitions and guidance in use of photoluminescence for detecting as-grown defects in commercially available 4H-SiC (Silicon Carbide) epitaxial wafers. Additionally, this document exemplifies photoluminescence images and emission spectra to enable the detection and categorization of the defects in SiC homoepitaxial wafers.