Cover IEC 63284:2022

IEC 63284:2022

Semiconductor devices - Reliability test method by inductive load switching for gallium nitride transistors

Circulation Date: 2022-04
Edition: 1.0
Language: EN-FR - bilingual english/french
Seitenzahl: 25 VDE Artno.: 250839


IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress