IEC 63275-2:2022
Semiconductor devices - Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors - Part 2: Test method for bipolar degradation due to body diode operation
Circulation Date:
2022-05
Edition:
1.0
Language: EN-FR - bilingual english/french
Seitenzahl: 20 VDE Artno.: 250879
IEC 63275-2:2022 gives the test method and a procedure using this method to evaluate the on-state voltage change, on-state resistance change and reverse drain voltage change of silicon carbide (SiC) power MOSFET devices due to body diode operation. This test is not generally requested for Si power transistors.